The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...

For switching high-powered loads from a microcontroller, or for switching AC loads in general, most of us will reach into the ...

Substituting the values from Table 1 into Equation 3 and 4, values for η and R S are obtained for this 'thermal diode' treated as a 2-terminal diode and listed in Table 2. Figure 2 is a plot of two ...

Research groups in Japan and the U.S. jointly developed a double-layered nanowire, consisting of a germanium core and a silicon shell, which is a promising material for high-speed transistor channels.

SANTA CLARA, Calif. — In a move to address the power concerns of future microprocessors, Intel Corp. here today announced a new transistor structure that marks the company's initial use of high-k ...

Your design task, should you decide to accept it: given an input voltage, square it. Ok, that’s too hard since squaring 8 volts would give you 64 volts, so let’s say the output should be 10% of the ...

A RIKEN study shows that squeezing the right amount of potassium ions between the atomic layers of molybdenum disulfide can turn it from a semiconductor into a metal, superconductor or insulator. The ...

The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...

A graphene-based spin field-effect transistor has been used in an operating at room temperature. Using the spin of the electrons in graphene and other layered material heterostructures the researchers ...

(Nanowerk News) A research group led by Naoki Fukata, International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), and a research group at Georgia Institute ...