Abstract: In this paper, H-band (220-325 GHz) power amplifier (PA) integrated circuits (ICs) are presented using 250-nm InP HBT technology, where a cascode topology was adopted to achieve high gain ...
Abstract: This paper presents a highly linear differential cascode CMOS power amplifier (PA) with gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed Class-D bias ...
Quickly create publication-quality graphics using the same symbol palettes as your favorite manufacturers and textbooks. Symbols are drawn to a 1px grid (coarse grid used for all terminals) with 0.5, ...
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