I R (International Rectifier), the first to build GaN (gallium-nitride) devices on silicon, has now introduced GaNpowIR, its first product on a GaN platform. GaN-device structures are not new; using a ...
Sponsored by Texas Instruments: Though they still vie for the largest slice of the power-design pie with LDMOS and SiC MOSFETs, GaN devices offer superior specs that may ultimately make them the ...
GaN Systems Inc., provider of gallium nitride power switching semiconductors, and Arkansas Power Electronics International Inc. (APEI), developer of state-of-the-art technology for power electronics ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE ...
OTTAWA, Feb. 28, 2018 (GLOBE NEWSWIRE) -- GaN Systems, the global leader in GaN power semiconductors, today made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most ...
OSAKA, Japan--(BUSINESS WIRE)--Panasonic Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaN TM)** package.
The basic design requirements for power semiconductors are efficiency, reliability, controllability, and cost-effectiveness. High-frequency capability adds further value in system size and transient ...
The FINANCIAL — Panasonic Corporation on February 23 announced that it has developed an insulated-gate (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no ...
Gallium nitride-based LEDs and power transistors can be made on the same IC, according to scientists from Cornell University and the Polish Academy of Sciences. The trick is to used both sides of the ...
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