Compound Semiconductor

KnowMade GaN patent monitor shows surging innovation

The Q3 2025 patent landscape confirms GaN’s accelerating industrial expansion. During the quarter, 599 new patent families ...
Compound Semiconductor

Onsemi and Innoscience to collaborate on GaN power roll out

The collaboration outlined in the MoU brings together Onsemi’s experience in integrated systems and packaging with Innoscience’s GaN technology and high-volume manufacturing to enable delivery of cost ...

onsemi and Innoscience Announce Plans to Collaborate to Speed Global Rollout of GaN Power Portfolio

Summary: onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) ...
New Electronics

onsemi and Innoscience to accelerate GaN power technology adoption

onsemi and Innoscience have signed a memorandum of understanding (MoU) to explore opportunities for speeding up the ...
TipRanks on MSN

onsemi, Innoscience to collaborate on rollout of GaN power portfolio

Innoscience announced the signing of a memorandum of understanding to evaluate opportunities to accelerate deployment of GaN power ...
Electronic Design

5 GaN Power Devices

Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. 1. A graph from “Comparative Study of Optimally Designed ...
Morningstar

Beneq Transform® Qualified for GaN Power Device Production by Tier 1 Asian Manufacturer

ESPOO, Finland, May 1, 2025 /PRNewswire/ -- Beneq announces that its Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a Tier 1 ...
EDN

Vertical GaN Devices: The Next Level of Power Electronics

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...
DATAQUEST

imec achieves world-record GaN breakdown voltage exceeding 650V on Shin-Etsu Chemical’s 300-mm QST substrate

V-rated product, to be followed by a 1200 V+ withstand voltage model, targeting AI data center, industrial, and automobile ...
Business Wire

Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs

HAVERHILL, Mass.--(BUSINESS WIRE)--For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and ...
Electronic Design

Qualifying and Quantifying GaN Devices for Power Applications

It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS ...
Business Wire

Transphorm Ships Over One Million GaN Devices for Fast Chargers and Power Adapters in December 2021

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (OTCQX: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...