SiSiC (reaction bonded silicon carbide, also known as RBSIC) grinding buckets are engineered to handle severe mechanical wear, impact, and chemical exposure. Compared with metal, polymer-lined, or ...

The 300mm silicon carbide wafer targets higher production capacity for power electronics and advanced system integration.

Silicon carbide is for photonic circuits and quantum devices. Atomic layer processing boosts SiC waveguides and resonators, improving performance.

The advent of big data era raising significant challenges in information processing, especially in the aspect of capacity and power consumption. Situations become even worse when we consider the fact ...

In the world of electric (EV) and software-defined vehicles (SDV), a key challenge and opportunity besets original equipment manufacturers (OEM): that of effectively harnessing in-vehicle and silicon ...

High-volume products get more than their fair share of attention in the semiconductor world, but most chips don’t fit into that category. While a few huge fabs and offshore assembly and test (OSAT) ...

How a single silicon chip was designed to be microwave and optical signal-processing engine. The various roles for which this engine can be reconfigured. The performance considerations that were ...

Researchers from KAUST, TU Delft, and LMU Munich have improved the performance of monolithic perovskite-silicon tandem solar cells by modifying the physical structure at the front of the bottom ...

Atomic layer processing improves optical performance in SiC photonic devices, crucial for developing efficient quantum ...

Silicon carbide (SiC) is a promising material platform for photonic integrated circuits (PICs) and miniaturized solid-state quantum systems. In the ALP-4-SiC project, researchers from the Max Planck ...

Researchers from the Max Planck Institute for the Science of Light and the Fraunhofer Institute for Integrated Systems and Device Technology IISB are advancing silicon carbide as a key material ...