(Nanowerk News) Researchers at Tohoku University have developed guidelines for a single-nanometer magnetic tunnel junction (MTJ), allowing for performance tailoring to meet the requirements of diverse ...
(top) Overview of the 113-km experimental path for BDCR. (bottom) The primary apparatus at two experimental sites. The OFCs at the two terminals of the same wavelength have a slight frequency ...
PIRest, a technology, best described as programmable piezo shims, can maintain position without power, and adjust thickness in increments on the nanometer scale and below. The combination of PIRest ...
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, has announced its 90-nanometer (nm) smart card IC with high data storage capacity for subscriber identity module (SIM) ...
Samsung Electronics Co., Ltd., announced that it is now sampling its 16-gigabit (Gb) NAND flash memory with customers – the first NAND flash using 50 nanometer (nm) process technology. The first ...
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