The 3.3-V IC is organized as 256 Kwords by 16 bits and comes in a 400-mil 44-lead TSOP package. Active read and write current values are 55 mA and 105 mA, typical standby current is 9 mA and, since it ...
Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading ...
NUREMBERG, Germany--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced the development of ...
New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025 CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies ...
CHANDLER, Ariz.--(BUSINESS WIRE)-- Everspin Technologies, Inc., (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM) persistent memory solutions, announced ...
A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...
Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of persistent Magnetoresistive Random Access Memory (MRAM) solutions, today announced its newest ...
Everspin Technologies today announced what it is calling the industry’s first Spin-Torque Magnetoresistive RAM (ST-MRAM) chip, which offers an alternative to non-volatile DRAM sub systems. Everspin ...
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