The world of power electronics witnessed a breakthrough in 1959 when Dawon Kahng and Martin Atalla invented the metal-oxide-semiconductor field-effect transistor (MOSFET) transistor at Bell Labs. The ...
Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...
In recent years, MOSFETs have benefited from huge investments in technology and promotion alike, overshadowing bipolar devices to the degree that many designers view bipolars as old technology.
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