Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
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